IRFP31N50L
MOSFET N-CH 500V 31A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP31N50L. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 31 A at 25°C. The Rds On is a maximum of 180 mOhm at 19 A and 10 V. With a maximum power dissipation of 460 W (Tc), this device is suitable for through-hole mounting in a TO-247-3 package. Key parameters include a Gate Charge (Qg) of 210 nC @ 10 V and input capacitance (Ciss) of 5000 pF @ 25 V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power supply and industrial applications requiring high voltage and current handling.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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