IRFP27N60KPBF
MOSFET N-CH 600V 27A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFP27N60KPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a breakdown voltage of 600V and a continuous drain current capability of 27A at 25°C, with a maximum power dissipation of 500W at the same temperature. The Rds(on) is specified at a maximum of 220mOhm with an Id of 16A and Vgs of 10V. Key parameters include a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 4660 pF at 25V. This through-hole device utilizes the TO-247-3 package, also known as TO-247AC. The IRFP27N60KPBF is suitable for use in power supplies, motor control, and industrial automation systems. It operates across an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4660 pF @ 25 V |
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