IRFP26N60LPBF
MOSFET N-CH 600V 26A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFP26N60LPBF. This TO-247-3 package device features a 600V drain-to-source voltage and a continuous drain current of 26A at 25°C (Tc). The Rds On is specified as a maximum of 250mOhm at 16A and 10V gate-source voltage. Key parameters include a maximum power dissipation of 470W (Tc), a gate charge of 180nC at 10V, and input capacitance of 5020pF at 25V. Operating temperature range is from -55°C to 150°C (TJ). This device is suitable for applications in power supply, industrial, and automotive sectors requiring high voltage and current switching capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 470W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5020 pF @ 25 V |
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