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IRFP26N60L

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IRFP26N60L

MOSFET N-CH 600V 26A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFP26N60L is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 26A at 25°C, with a maximum power dissipation of 470W (Tc). The Rds(on) is specified at 250mOhm maximum at 16A and 10V gate drive. Key parameters include a gate charge (Qg) of 180 nC maximum at 10V and input capacitance (Ciss) of 5020 pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-247-3 package, suitable for through-hole mounting. This MOSFET is utilized in power factor correction, switch mode power supplies, and motor control applications within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)470W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5020 pF @ 25 V

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