IRFP26N60L
MOSFET N-CH 600V 26A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFP26N60L is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 26A at 25°C, with a maximum power dissipation of 470W (Tc). The Rds(on) is specified at 250mOhm maximum at 16A and 10V gate drive. Key parameters include a gate charge (Qg) of 180 nC maximum at 10V and input capacitance (Ciss) of 5020 pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-247-3 package, suitable for through-hole mounting. This MOSFET is utilized in power factor correction, switch mode power supplies, and motor control applications within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 470W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5020 pF @ 25 V |
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