IRFP264
MOSFET N-CH 250V 38A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFP264 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole component features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 38A at 25°C (Tc). With a maximum on-resistance (Rds On) of 75mOhm at 23A and 10V Vgs, it offers low conduction losses. The device boasts a maximum power dissipation of 280W (Tc) and a gate charge (Qg) of 210 nC at 10V. Its input capacitance (Ciss) is rated at 5400 pF at 25V. The IRFP264 is housed in a TO-247-3 package and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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