IRFP254NPBF
MOSFET N-CH 250V 23A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix IRFP254NPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 23 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 125 mOhm at 14 A and 10 V gate drive, contributing to reduced conduction losses. With a maximum power dissipation of 220 W (Tc), it is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 100 nC at 10 V and an input capacitance (Ciss) of 2040 pF at 25 V. The MOSFET is housed in a TO-247-3 package with through-hole mounting, ensuring robust mechanical connection. Operating temperature range is from -55°C to 175°C (TJ). This component finds application in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 220W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
SQA444CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
