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IRFP254

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IRFP254

MOSFET N-CH 250V 23A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel Power MOSFET, part number IRFP254, offers robust performance with a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 23A at 25°C (Tc). This device features a low on-resistance of 140mOhm maximum at 14A, 10V, and a maximum gate charge of 140 nC at 10V, contributing to efficient switching characteristics. The input capacitance (Ciss) is rated at 2700 pF maximum at 25V. With a maximum power dissipation of 190W (Tc) and a Vgs(th) of 4V at 250µA, the IRFP254 is suitable for demanding applications. It is housed in a TO-247-3 package, designed for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs140mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)190W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V

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