IRFP254
MOSFET N-CH 250V 23A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number IRFP254, offers robust performance with a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 23A at 25°C (Tc). This device features a low on-resistance of 140mOhm maximum at 14A, 10V, and a maximum gate charge of 140 nC at 10V, contributing to efficient switching characteristics. The input capacitance (Ciss) is rated at 2700 pF maximum at 25V. With a maximum power dissipation of 190W (Tc) and a Vgs(th) of 4V at 250µA, the IRFP254 is suitable for demanding applications. It is housed in a TO-247-3 package, designed for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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