IRFP240
MOSFET N-CH 200V 20A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP240. This through-hole component offers a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 20A at 25°C (Tc). The device features low on-resistance (Rds On) of 180mOhm maximum at 12A, 10V and a maximum power dissipation of 150W (Tc). With a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V, it is suitable for applications requiring efficient switching. The TO-247-3 package ensures robust thermal performance across an operating temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply designs, motor control, and audio amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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