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IRFP23N50LPBF

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IRFP23N50LPBF

MOSFET N-CH 500V 23A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFP23N50LPBF, a N-Channel Power MOSFET, offers a robust 500V drain-source voltage (Vdss) and a continuous drain current of 23A at 25°C. This device features a maximum on-resistance (Rds On) of 235mOhm at 14A and 10V gate-source voltage. With a high power dissipation capability of 370W at 25°C (Tc) and a low gate charge of 150 nC typical at 10V, it is suitable for demanding applications. The IRFP23N50LPBF utilizes TO-247AC through-hole packaging, ensuring effective thermal management across an operating temperature range of -55°C to 150°C. Its design makes it applicable in power supply, industrial, and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs235mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)370W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V

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