IRFP23N50LPBF
MOSFET N-CH 500V 23A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFP23N50LPBF, a N-Channel Power MOSFET, offers a robust 500V drain-source voltage (Vdss) and a continuous drain current of 23A at 25°C. This device features a maximum on-resistance (Rds On) of 235mOhm at 14A and 10V gate-source voltage. With a high power dissipation capability of 370W at 25°C (Tc) and a low gate charge of 150 nC typical at 10V, it is suitable for demanding applications. The IRFP23N50LPBF utilizes TO-247AC through-hole packaging, ensuring effective thermal management across an operating temperature range of -55°C to 150°C. Its design makes it applicable in power supply, industrial, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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