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IRFP23N50L

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IRFP23N50L

MOSFET N-CH 500V 23A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel, part number IRFP23N50L. This device offers a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 23A at 25°C. The N-Channel MOSFET features a low on-resistance of 235mOhm maximum at 14A, 10V gate drive. Key parameters include a maximum Gate Charge (Qg) of 150 nC at 10V and Input Capacitance (Ciss) of 3600 pF at 25V. With a maximum Power Dissipation of 370W at 25°C, this MOSFET is suitable for high-power applications. It is packaged in a TO-247-3 (TO-247AC) through-hole configuration and operates within a temperature range of -55°C to 150°C. This component finds application in power supply units, industrial motor control, and automotive electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs235mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)370W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V

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