IRFP23N50L
MOSFET N-CH 500V 23A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFP23N50L. This device offers a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 23A at 25°C. The N-Channel MOSFET features a low on-resistance of 235mOhm maximum at 14A, 10V gate drive. Key parameters include a maximum Gate Charge (Qg) of 150 nC at 10V and Input Capacitance (Ciss) of 3600 pF at 25V. With a maximum Power Dissipation of 370W at 25°C, this MOSFET is suitable for high-power applications. It is packaged in a TO-247-3 (TO-247AC) through-hole configuration and operates within a temperature range of -55°C to 150°C. This component finds application in power supply units, industrial motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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