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IRFP22N60K

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IRFP22N60K

MOSFET N-CH 600V 22A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel IRFP22N60K. This TO-247AC packaged power MOSFET offers a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C with a maximum power dissipation of 370W (Tc). Key parameters include a maximum Rds(on) of 280mOhm at 13A and 10V gate-source voltage, and a gate charge (Qg) of 150nC at 10V. Input capacitance (Ciss) is rated at 3570pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C. This component is suitable for applications in power supply, industrial motor control, and lighting.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)370W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3570 pF @ 25 V

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