IRFP22N60K
MOSFET N-CH 600V 22A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP22N60K. This TO-247AC packaged power MOSFET offers a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C with a maximum power dissipation of 370W (Tc). Key parameters include a maximum Rds(on) of 280mOhm at 13A and 10V gate-source voltage, and a gate charge (Qg) of 150nC at 10V. Input capacitance (Ciss) is rated at 3570pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C. This component is suitable for applications in power supply, industrial motor control, and lighting.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3570 pF @ 25 V |
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