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IRFP22N50A

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IRFP22N50A

MOSFET N-CH 500V 22A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel Power MOSFET, part number IRFP22N50A, offers a robust solution for high-power applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 22A at 25°C. The device boasts a maximum power dissipation of 277W (Tc) and a low on-resistance (Rds On) of 230mOhm at 13A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 3450 pF at 25V. The IRFP22N50A is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This MOSFET technology is widely utilized in power supply units, industrial motor control, and lighting applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)277W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3450 pF @ 25 V

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