IRFP22N50A
MOSFET N-CH 500V 22A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number IRFP22N50A, offers a robust solution for high-power applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 22A at 25°C. The device boasts a maximum power dissipation of 277W (Tc) and a low on-resistance (Rds On) of 230mOhm at 13A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 3450 pF at 25V. The IRFP22N50A is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This MOSFET technology is widely utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V |
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