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IRFP21N60LPBF

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IRFP21N60LPBF

MOSFET N-CH 600V 21A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFP21N60LPBF is a N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 21A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 320mOhm at 13A and 10V gate drive. With a high power dissipation capability of 330W (Tc) and a low gate charge of 150 nC at 10V, the IRFP21N60LPBF is suitable for demanding applications such as switch mode power supplies, industrial motor control, and lighting. The TO-247-3 package ensures robust thermal performance and ease of mounting. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs320mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)330W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 25 V

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