IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFP21N60LPBF is a N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 21A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 320mOhm at 13A and 10V gate drive. With a high power dissipation capability of 330W (Tc) and a low gate charge of 150 nC at 10V, the IRFP21N60LPBF is suitable for demanding applications such as switch mode power supplies, industrial motor control, and lighting. The TO-247-3 package ensures robust thermal performance and ease of mounting. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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