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IRFP21N60L

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IRFP21N60L

MOSFET N-CH 600V 21A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFP21N60L is a 600V N-Channel Power MOSFET in a TO-247AC package. This device offers a continuous drain current of 21A (Tc) at 25°C and a maximum power dissipation of 330W (Tc). Key parameters include a drain-to-source voltage (Vdss) of 600V, a typical gate charge (Qg) of 150 nC at 10V, and a maximum on-resistance (Rds On) of 320mOhm at 13A and 10V. With a threshold voltage (Vgs(th)) of 5V at 250µA and a maximum gate-source voltage (Vgs) of ±30V, it is designed for efficient switching applications. This MOSFET is suitable for power supply units, industrial motor control, and lighting applications. It features a through-hole mounting type and operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs320mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)330W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 25 V

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