IRFP21N60L
MOSFET N-CH 600V 21A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFP21N60L is a 600V N-Channel Power MOSFET in a TO-247AC package. This device offers a continuous drain current of 21A (Tc) at 25°C and a maximum power dissipation of 330W (Tc). Key parameters include a drain-to-source voltage (Vdss) of 600V, a typical gate charge (Qg) of 150 nC at 10V, and a maximum on-resistance (Rds On) of 320mOhm at 13A and 10V. With a threshold voltage (Vgs(th)) of 5V at 250µA and a maximum gate-source voltage (Vgs) of ±30V, it is designed for efficient switching applications. This MOSFET is suitable for power supply units, industrial motor control, and lighting applications. It features a through-hole mounting type and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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