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IRFP17N50LPBF

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IRFP17N50LPBF

MOSFET N-CH 500V 16A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFP17N50LPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 16A at 25°C (Tc). The Rds(on) is specified at a maximum of 320mOhm at 9.9A and 10V gate drive. With a maximum power dissipation of 220W (Tc), it is suitable for demanding power conversion tasks. Key characteristics include a gate charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 2760 pF at 25V. The device utilizes advanced MOSFET technology and is supplied in a TO-247-3 package for through-hole mounting. This component is commonly employed in industrial power supplies, electric vehicle charging systems, and renewable energy inverters. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs320mOhm @ 9.9A, 10V
FET Feature-
Power Dissipation (Max)220W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 25 V

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