IRFP17N50L
MOSFET N-CH 500V 16A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel 500V 16A, part number IRFP17N50L. This power MOSFET features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C (Tc). The IRFP17N50L offers a maximum on-resistance (Rds On) of 320mOhm at 9.9A and 10V gate-source voltage. Its gate charge (Qg) is 130 nC at 10V, with input capacitance (Ciss) at 2760 pF (max) at 25V. Designed for through-hole mounting in a TO-247-3 package, this component has a maximum power dissipation of 220W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). The IRFP17N50L is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 220W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2760 pF @ 25 V |
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