IRFP15N60LPBF
MOSFET N-CH 600V 15A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFP15N60LPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 15A (Tc) at 25°C, this component offers a maximum power dissipation of 280W (Tc). The low on-resistance (Rds On) of 460mOhm is achieved at 9A, 10V, facilitated by a gate drive voltage of 10V. Key electrical characteristics include a maximum gate charge (Qg) of 100 nC @ 10 V and input capacitance (Ciss) of 2720 pF @ 25 V. This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. Operating within a temperature range of -55°C to 150°C (TJ), the IRFP15N60LPBF is utilized in power supply, industrial, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2720 pF @ 25 V |
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