IRFP044PBF
MOSFET N-CH 60V 57A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFP044PBF, is a power MOSFET designed for high-current switching applications. This through-hole component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 57A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 28mOhm at 34A and 10V gate-source voltage (Vgs), ensuring efficient operation. With a maximum power dissipation of 180W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 95 nC at 10V and an input capacitance (Ciss) of 2500 pF at 25V. The TO-247AC package facilitates robust thermal management. This component is widely utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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