IRFL9110TR
MOSFET P-CH 100V 1.1A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFL9110TR is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.1A at 25°C (Tc). The low on-resistance of 1.2 Ohm at 660mA and 10V (Vgs) minimizes conduction losses. Packaged in a SOT-223 (TO-261-4, TO-261AA) surface-mount format, it offers a power dissipation of 2W (Ta) or 3.1W (Tc). Key parameters include a gate charge (Qg) of 8.7 nC at 10V and input capacitance (Ciss) of 200 pF at 25V. This component is suitable for use in power management, automotive, and industrial control systems, operating across an extended temperature range of -55°C to 150°C (TJ). The Vishay Siliconix IRFL9110TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 660mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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