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IRFL9110TR

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IRFL9110TR

MOSFET P-CH 100V 1.1A SOT223

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFL9110TR is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.1A at 25°C (Tc). The low on-resistance of 1.2 Ohm at 660mA and 10V (Vgs) minimizes conduction losses. Packaged in a SOT-223 (TO-261-4, TO-261AA) surface-mount format, it offers a power dissipation of 2W (Ta) or 3.1W (Tc). Key parameters include a gate charge (Qg) of 8.7 nC at 10V and input capacitance (Ciss) of 200 pF at 25V. This component is suitable for use in power management, automotive, and industrial control systems, operating across an extended temperature range of -55°C to 150°C (TJ). The Vishay Siliconix IRFL9110TR is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.1A (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 660mA, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V

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