IRFL9110PBF
MOSFET P-CH 100V 1.1A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFL9110PBF is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 1.1A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 1.2 Ohms at 660mA and 10V gate drive. With a gate charge (Qg) of 8.7 nC (max) at 10V and input capacitance (Ciss) of 200 pF (max) at 25V, it is suitable for various switching and amplification circuits. The IRFL9110PBF is packaged in a SOT-223 (TO-261-4) surface-mount package, capable of dissipating up to 2W (Ta) or 3.1W (Tc). Key parameters include a threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is commonly utilized in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 660mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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