IRFL9110
MOSFET P-CH 100V 1.1A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFL9110 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 1.1A at 25°C (Tc). The IRFL9110 offers a maximum on-resistance (Rds On) of 1.2 Ohms at 660mA and 10V gate drive. With a gate charge (Qg) of 8.7 nC (max) at 10V and an input capacitance (Ciss) of 200 pF (max) at 25V, it is suitable for various power management solutions. This MOSFET is packaged in a SOT-223 (TO-261-4, TO-261AA) surface mount package, allowing for efficient thermal dissipation with a maximum power dissipation of 2W (Ta) or 3.1W (Tc). The Vishay Siliconix IRFL9110 finds application in industries such as automotive and industrial power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 660mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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