IRFL9014PBF
MOSFET P-CH 60V 1.8A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFL9014PBF is a P-Channel Power MOSFET designed for power management applications. This device features a 60V drain-to-source breakdown voltage and a continuous drain current rating of 1.8A at 25°C (Tc). With a maximum on-resistance of 500mOhm at 1.1A and 10V gate drive, it offers efficient switching characteristics. The MOSFET is housed in a SOT-223 package, facilitating surface mount assembly. Key parameters include a gate charge of 12nC (max) and input capacitance of 270pF (max). It operates across a temperature range of -55°C to 150°C. This component finds utility in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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