IRFL9014
MOSFET P-CH 60V 1.8A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFL9014 is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 1.8A at 25°C (Tc). The device offers a low On-Resistance (Rds On) of 500mOhm maximum at 1.1A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 12 nC maximum at 10V and an Input Capacitance (Ciss) of 270 pF maximum at 25V. The IRFL9014 is housed in a SOT-223 surface mount package, allowing for efficient thermal dissipation with a maximum power dissipation of 2W (Ta) or 3.1W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in various industries including industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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