IRFL214TRPBF-BE3
MOSFET N-CH 250V 790MA SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFL214TRPBF-BE3 is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 790mA at 25°C (Tc). The Rds On is specified at a maximum of 2 Ohms at 470mA and 10V gate drive. With a Gate Charge (Qg) of 8.2 nC (max) at 10V and Input Capacitance (Ciss) of 140 pF (max) at 25V, it offers favorable switching characteristics. The MOSFET is housed in a SOT-223 package, enabling surface mount assembly. Power dissipation is rated at 2W (Ta) and 3.1W (Tc). This component is suitable for use in various industrial and consumer electronics, including power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 790mA (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 470mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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