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IRFL214TR

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IRFL214TR

MOSFET N-CH 250V 790MA SOT223

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix's IRFL214TR is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 790mA at 25°C (Tc). Featuring low on-resistance (Rds On) of 2 Ohms maximum at 470mA and 10V Vgs, it ensures efficient power transfer. The device is packaged in a SOT-223 surface mount package, supplied on tape and reel, and supports a gate-source voltage range of ±20V. With a maximum gate charge of 8.2 nC at 10V and an input capacitance (Ciss) of 140 pF at 25V, it is suitable for switching applications in power supply units, industrial automation, and telecommunications infrastructure. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C790mA (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 470mA, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V

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