IRFL214PBF
MOSFET N-CH 250V 790MA SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix's IRFL214PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 250V drain-source breakdown voltage and a continuous drain current capability of 790mA at 25°C (Tc). The device exhibits a maximum on-resistance of 2 Ohms at 470mA and 10V gate-source voltage, with a total gate charge of 8.2 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 140 pF at 25V. The IRFL214PBF offers a power dissipation of 2W (Ta) or 3.1W (Tc) and is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage tolerance of ±20V. This component finds application in industrial power supplies, lighting controls, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 790mA (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 470mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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