IRFL210PBF
MOSFET N-CH 200V 960MA SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFL210PBF. This device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 960mA at 25°C (Tc). The Rds On is specified at a maximum of 1.5 Ohms at 580mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 8.2 nC at 10V and an input capacitance (Ciss) of 140 pF at 25V. The TO-261-4, TO-261AA package, also known as SOT-223, is suitable for surface mounting. Power dissipation is rated at 2W (Ta) and 3.1W (Tc). This MOSFET is utilized across various industrial applications, including power supply units and general-purpose switching. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 960mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 580mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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