IRFL210
MOSFET N-CH 200V 960MA SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFL210 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current of 960mA at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.5 Ohms at 580mA and 10V gate drive, it offers low conduction losses. The device is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package, supporting a maximum power dissipation of 2W (Ta) or 3.1W (Tc). Key parameters include a gate charge (Qg) of 8.2 nC and input capacitance (Ciss) of 140 pF, both specified at relevant drive and drain voltages. This MOSFET is suitable for use in industrial, consumer electronics, and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 960mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 580mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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