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IRFL110TR

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IRFL110TR

MOSFET N-CH 100V 1.5A SOT223

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel Power MOSFET, part number IRFL110TR, offers a 100V drain-source voltage rating and a continuous drain current of 1.5A at 25°C (Tc). This device features a low on-resistance of 540mOhm maximum at 900mA, 10V Vgs. The SOT-223 package utilizes Surface Mount technology for efficient thermal management, with a maximum power dissipation of 2W (Ta) and 3.1W (Tc). Key parameters include a gate charge of 8.3 nC maximum at 10V, input capacitance of 180 pF maximum at 25V, and a gate-source voltage tolerance of ±20V. The threshold voltage is 4V maximum at 250µA. This component is suitable for applications in power supply switching, motor control, and general-purpose switching across various industrial sectors. The IRFL110TR is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Rds On (Max) @ Id, Vgs540mOhm @ 900mA, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 25 V

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