IRFL110
MOSFET N-CH 100V 1.5A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFL115, an N-Channel Power MOSFET, offers a 100V drain-source breakdown voltage and 1.5A continuous drain current at 25°C (Tc). This device features a maximum Rds(on) of 540mOhm at 900mA and 10V Vgs. The IRFL115 is packaged in a SOT-223 (TO-261-4, TO-261AA) surface mount configuration, rated for 2W (Ta) and 3.1W (Tc) power dissipation. Key parameters include a gate charge of 8.3nC (max) at 10V and input capacitance of 180pF (max) at 25V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management and general switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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