IRFL014TR
MOSFET N-CH 60V 2.7A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFL014TR is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 2.7A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 200mOhm at 1.6A and 10V gate drive. With a gate charge (Qg) of 11 nC at 10V and an input capacitance (Ciss) of 300 pF at 25V, it is suitable for various power management tasks. The MOSFET is housed in a SOT-223 surface mount package, enabling compact board designs. Its power dissipation capabilities are 2W (Ta) and 3.1W (Tc). The Vishay Siliconix IRFL014TR is utilized in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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