IRFL014
MOSFET N-CH 60V 2.7A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFL014 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 2.7A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 200mOhm at 1.6A and 10V Vgs, it offers low conduction losses. The device is supplied in a SOT-223 package, facilitating surface mount assembly. Key electrical parameters include a gate charge (Qg) of 11nC (max) at 10V and input capacitance (Ciss) of 300pF (max) at 25V. The maximum power dissipation is rated at 2W (Ta) or 3.1W (Tc). This MOSFET is suitable for use in various industrial and consumer electronics, including power supplies and motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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