IRFIZ48G
MOSFET N-CH 60V 37A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFIZ48G is a high-performance N-Channel Power MOSFET designed for demanding applications. This TO-220-3 packaged device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 37A at 25°C (Tc). With a low on-resistance (Rds On) of 18mOhm at 22A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 50W (Tc) and a gate charge (Qg) of 110 nC at 10V. Operating effectively across a wide temperature range from -55°C to 175°C (TJ), the IRFIZ48G is suitable for use in power supplies, automotive electronics, and industrial motor control systems. It utilizes advanced MOSFET technology for efficient power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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