IRFIZ34GPBF
MOSFET N-CH 60V 20A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFIZ34GPBF is an N-Channel Power MOSFET designed for high-density power management applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 20 A at 25°C (Tc), with a maximum power dissipation of 42 W (Tc). The Rds On is specified at a maximum of 50 mOhm when driven at 12 A and 10 Vgs. Key parameters include a 46 nC gate charge (Qg) at 10 V and 1200 pF input capacitance (Ciss) at 25 V. The device operates within a temperature range of -55°C to 175°C (TJ). It is supplied in a TO-220-3 Full Pack, Isolated Tab package suitable for through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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