IRFIZ34G
MOSFET N-CH 60V 20A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFIZ34G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) rating of 20A at 25°C. The low on-resistance, specified at a maximum of 50mOhm at 12A and 10V gate-source voltage, ensures efficient power transfer. With a gate charge (Qg) of 46 nC and input capacitance (Ciss) of 1200 pF, this MOSFET is suitable for various switching applications. The TO-220-3 Full Pack, Isolated Tab package provides robust thermal performance with a maximum power dissipation of 42W. Operating across a wide temperature range of -55°C to 175°C, the IRFIZ34G is utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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