IRFIBF30G
MOSFET N-CH 900V 1.9A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFIBF30G. This N-Channel MOSFET offers a 900 V drain-source voltage and a continuous drain current of 1.9 A at 25°C. Featuring a maximum power dissipation of 35 W at the case temperature, this component has an Rds On of 3.7 Ohm maximum at 1.1 A and 10 V gate-source voltage. The device includes a gate charge of 78 nC maximum at 10 V and input capacitance of 1200 pF maximum at 25 V. It is supplied in a TO-220-3 package for through-hole mounting and operates across a junction temperature range of -55°C to 150°C. Applications for this Vishay Siliconix component include power supply units and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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