IRFIBC40GLC
MOSFET N-CH 600V 3.5A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFIBC40GLC N-Channel Power MOSFET, TO-220-3 package. This device offers a 600V drain-source breakdown voltage and a continuous drain current of 3.5A at 25°C (Tc). With a maximum on-resistance of 1.2 Ohm at 2.1A and 10V Vgs, the IRFIBC40GLC is suitable for applications requiring efficient switching. Key parameters include a gate charge (Qg) of 39 nC at 10V and an input capacitance (Ciss) of 1100 pF at 25V. The maximum power dissipation is 40W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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