IRFIBC30GPBF
MOSFET N-CH 600V 2.5A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFIBC30GPBF is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 2.5 A at 25°C (Tc). The on-resistance (Rds On) is rated at a maximum of 2.2 Ohms at 1.5 A and 10 V gate drive. With a maximum power dissipation of 35 W (Tc), this MOSFET is suitable for use in power supplies, industrial motor control, and lighting applications. Key parameters include a gate charge (Qg) of 31 nC at 10 V and an input capacitance (Ciss) of 660 pF at 25 V. The device is packaged in a TO-220-3 Full Pack, Isolated Tab for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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