IRFIBC30G
MOSFET N-CH 600V 2.5A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix presents the IRFIBC30G, an N-Channel Power MOSFET with a 600 V breakdown voltage and a continuous drain current capability of 2.5 A at 25°C. This through-hole component features a TO-220-3 package with an isolated tab, offering a maximum power dissipation of 35 W (Tc). The Rds On is rated at a maximum of 2.2 Ohm at 1.5 A and 10 V gate drive. Key parameters include a gate charge of 31 nC at 10 V and an input capacitance of 660 pF at 25 V. The operating temperature range is from -55°C to 150°C (TJ), with a maximum gate-source voltage of ±20 V and a threshold voltage of 4 V at 250 µA. This MOSFET is suitable for applications in power supply units, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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