IRFIB8N50KPBF
MOSFET N-CH 500V 6.7A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFIB8N50KPBF, features a 500 V drain-to-source voltage and a continuous drain current of 6.7 A at 25°C. This TO-220-3 package device offers a maximum power dissipation of 45W (Tc) and a low on-resistance of 350 mOhm at 4A, 10V. The gate charge is specified at 89 nC maximum at 10 V, with input capacitance (Ciss) at 2160 pF maximum at 25 V. The operating temperature range is -55°C to 150°C (TJ), and the maximum gate-source voltage is ±30V. This component is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 25 V |
Request a Quote
Clients Also Buy
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SI3442CDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOP
