IRFIB8N50K
MOSFET N-CH 500V 6.7A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel IRFIB8N50K. This through-hole component features a 500V drain-to-source voltage and continuous drain current of 6.7A at 25°C. With a maximum power dissipation of 45W (Tc) and a typical Rds(on) of 350mOhm at 4A and 10V gate drive, this device is suitable for demanding applications. Key parameters include input capacitance (Ciss) of 2160pF (max) at 25V and gate charge (Qg) of 89nC at 10V. The TO-220-3 package with an isolated tab ensures robust mounting. This N-Channel MOSFET is utilized in power supply and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
