IRFIB7N50A
MOSFET N-CH 500V 6.6A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFIB7N50A is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 6.6 A at 25°C. The Rds(On) is specified at 520 mOhm maximum at 4 A and 10 V gate drive. With a typical gate charge (Qg) of 52 nC at 10 V, this MOSFET offers efficient switching characteristics. The component is housed in a TO-220-3 package for through-hole mounting and can dissipate up to 60 W at 25°C (Tc). Operating temperature range is -55°C to 150°C. This device is suitable for applications in power supplies, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1423 pF @ 25 V |
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