IRFIB6N60A
MOSFET N-CH 600V 5.5A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFIB6N60A is an N-Channel Power MOSFET designed for high-voltage applications. It features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 5.5 A at 25°C, with a maximum power dissipation of 60 W (Tc). The device exhibits a low on-resistance (Rds On) of 750 mOhm maximum at 3.3 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 49 nC maximum at 10 V and an input capacitance (Ciss) of 1400 pF maximum at 25 V. This MOSFET utilizes MOSFET (Metal Oxide) technology and is housed in a TO-220-3 package with an isolated tab, suitable for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This component is commonly employed in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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