IRFIB5N65A
MOSFET N-CH 650V 5.1A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFIB5N65A is a 650V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current of 5.1A (Tc) and a maximum power dissipation of 60W (Tc). The IRFIB5N65A exhibits a low on-resistance of 930mOhm at 3.1A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 48 nC (max) at 10V and input capacitance (Ciss) of 1417 pF (max) at 25V. The MOSFET is housed in a TO-220-3 package for through-hole mounting. This component is suitable for use in industrial power supplies, motor control, and lighting applications. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 930mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1417 pF @ 25 V |
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