IRFIB5N50LPBF
MOSFET N-CH 500V 4.7A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFIB5N50LPBF. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 4.7A at 25°C (Tc). The Rds On is specified at a maximum of 800mOhm at 2.4A, 10V. Key parameters include a gate charge (Qg) of 45nC at 10V and input capacitance (Ciss) of 1000pF at 25V. The device is housed in a TO-220-3 package with an isolated tab, suitable for through-hole mounting. Maximum power dissipation is 42W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
