IRFI9Z34G
MOSFET P-CH 60V 12A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-channel MOSFET, part number IRFI9Z34G, offers a 60V drain-source voltage and a continuous drain current of 12A at 25°C (Tc). This through-hole TO-220-3 package component features a maximum power dissipation of 42W (Tc). The Rds(On) is specified at 140mOhm maximum at 7.2A and 10V gate-source voltage. Key parameters include a 34 nC gate charge (Qg) and 1100 pF input capacitance (Ciss). Operating temperature ranges from -55°C to 175°C (TJ). This device is suitable for applications in industrial and automotive power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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