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IRFI9Z14G

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IRFI9Z14G

MOSFET P-CH 60V 5.3A TO220-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFI9Z14G is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 5.3A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 500mOhm at 3.2A and 10V gate drive. With a low gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 270 pF at 25V, it is suitable for efficient switching. The MOSFET is housed in a TO-220-3 Full Pack, Isolated Tab package, enabling through-hole mounting. It dissipates a maximum power of 27W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). This Vishay Siliconix MOSFET is commonly utilized in industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 3.2A, 10V
FET Feature-
Power Dissipation (Max)27W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 25 V

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