IRFI9634G
MOSFET P-CH 250V 4.1A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFI9634G, a P-Channel Power MOSFET, offers a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 4.1A at 25°C (Tc). This through-hole component, packaged in a TO-220-3 configuration, features a maximum power dissipation of 35W (Tc). With a maximum on-resistance (Rds On) of 1 Ohm at 2.5A and 10V, it utilizes Metal Oxide technology. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 680 pF at 25V. Designed for operation across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in industrial and power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
