IRFI9540G
MOSFET P-CH 100V 11A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI9540G is a P-Channel Power MOSFET designed for efficient power switching applications. This through-hole component features a 100V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 11A at 25°C (Tc), with a maximum power dissipation of 48W (Tc). The device exhibits a typical Rds On of 200mOhm at 6.6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 61nC (max) at 10V and input capacitance (Ciss) of 1400pF (max) at 25V. Operating across a temperature range of -55°C to 175°C (TJ), the TO-220-3 Full Pack, Isolated Tab package is suitable for industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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