IRFI9520G
MOSFET P-CH 100V 5.2A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI9520G is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 5.2A at 25°C (Tc), with a maximum power dissipation of 37W (Tc). The Rds On (Max) is specified at 600mOhm at 3.1A and 10V gate drive. Key electrical characteristics include a Gate Charge (Qg) of 18 nC maximum at 10V and an Input Capacitance (Ciss) of 390 pF maximum at 25V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220-3 Full Pack, Isolated Tab package suitable for through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
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